Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers

Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers

In this paper, a novel through-silicon via (TSV) fabrication strategy based on through-hole structures is proposed for low-cost and low-complexity manufacturing. Compared to conventional TSV fabrication processes, this method significantly simplifies the process flow by employing double-sided liner...

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Bibliographic Details
Main Authors: Baoyan Yang, Houjun Sun, Kaiqiang Zhu, Xinghua Wang
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Micromachines
Subjects:
through-silicon via
parylene liner
double-sided process
electroless plating
electroplating
Online Access:https://www.mdpi.com/2072-666X/16/7/750
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