Double-Sided Fabrication of Low-Leakage-Current Through-Silicon Vias (TSVs) with High-Step-Coverage Liner/Barrier Layers
In this paper, a novel through-silicon via (TSV) fabrication strategy based on through-hole structures is proposed for low-cost and low-complexity manufacturing. Compared to conventional TSV fabrication processes, this method significantly simplifies the process flow by employing double-sided liner...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2025-06-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/16/7/750 |
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