The Experimental Study of the Cerium Dioxide - Silicon Interface of MIS Structures
The article is devoted to the actual task of studying a dielectric, which is an alternative to silicon dioxide in metal-insulator-semiconductor (MIS) structures. In metal-silicon dioxide-silicon structures, upon going to nanosize, the thickness of the dielectric film decreases so much that it becom...
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Main Authors: | Л. М. Королевич, О. В. Борисов, А. О. Воронько |
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Format: | Article |
Language: | English |
Published: |
Igor Sikorsky Kyiv Polytechnic Institute
2021-06-01
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Series: | Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ |
Subjects: | |
Online Access: | http://doi.radap.kpi.ua/article/view/326641 |
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