The Experimental Study of the Cerium Dioxide - Silicon Interface of MIS Structures

The article is devoted to the actual task of studying a dielectric, which is an alternative to silicon dioxide in metal-insulator-semiconductor (MIS) structures. In metal-silicon dioxide-silicon structures, upon going to nanosize, the thickness of the dielectric film decreases so much that it becom...

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Bibliographic Details
Main Authors: Л. М. Королевич, О. В. Борисов, А. О. Воронько
Format: Article
Language:English
Published: Igor Sikorsky Kyiv Polytechnic Institute 2021-06-01
Series:Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ
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Online Access:http://doi.radap.kpi.ua/article/view/326641
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