CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In<sub>X</sub>Ga<sub>1-X</sub>As ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

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CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In<sub>X</sub>Ga<sub>1-X</sub>As ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heati...

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Bibliographic Details
Main Authors:	A. A. Gorskiy, L. B. Berliner, E. V. Titova
Format:	Article
Language:	Russian
Published:	MIREA - Russian Technological University 2013-08-01
Series:	Тонкие химические технологии
Subjects:	rotating substrate keeper, horizontal reactor, mocvd, movpe, 3d model, numerical studying, in<sub>x</sub>ga<sub>1-x</sub>as/inp, nanolayers.
Online Access:	https://www.finechem-mirea.ru/jour/article/view/576
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