Nitridation of GaAs Surface by Low Energy Ion Implantation with In Situ Control of Chemical Composition
None
Saved in:
| Main Author: | Mikoushkin, Valery |
|---|---|
| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2012
|
| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/37191 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Investigation of surface potential of GaAs surface by means of acoustoelectric effects
by: T. PUSTELNY, et al.
Published: (2014-05-01) -
Surface mechanics of GaAsP/GaAs epilayers for non-linear optical devices
by: Samuel M. Linser, et al.
Published: (2025-07-01) -
Modern GaAs processing methods /
by: Williams, Ralph E.
Published: (1990) -
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
by: A. V. Sapozhnikov, et al.
Published: (2025-07-01) -
Получение микропористых слоев GaAs методом химического травления на подложках р-GaAs и их фотолюминесценция
by: G. A. Paschenko, et al.
Published: (2012-02-01)


