The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si
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| Main Authors: | , |
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| Format: | Electronic Book Chapter |
| Language: | English |
| Published: |
IntechOpen
2011
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| Subjects: | |
| Online Access: | https://www.intechopen.com/chapters/21140 |
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