Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm

Currently, commonly used compact device models for CMOS inverters lack an explicit functional model that can efficiently describe the specific physical processes of HPM-coupled voltage excitation damaging the inverter. This paper proposes an explicit function model that describes the failure process...

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Bibliographic Details
Main Authors: Huikai Chen, Jinbin Pan, Shulong Wang, Liutao Li, Jin Huang, Shupeng Chen, Hongxia Liu
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10616156/
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