APA (7th ed.) Citation

Wu, J., Li, P., Zhou, X., Wu, J., & Hao, Y. (2021). Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer. IEEE.

Chicago Style (17th ed.) Citation

Wu, Jinxing, Peixian Li, Xiaowei Zhou, Jiangtao Wu, and Yue Hao. Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and P-Type Hole Supply Layer. IEEE, 2021.

MLA (9th ed.) Citation

Wu, Jinxing, et al. Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and P-Type Hole Supply Layer. IEEE, 2021.