Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer
A 365 nm Al<sub>x</sub>Ga<sub>1-x</sub>N-based ultraviolet light-emitting diodes (LEDs) with double Al composition gradient last quantum barrier and hole supply layer structure has been studied. Experimental results show that the proposed structure enhances the carrier inject...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9353194/ |
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