The study of morphology of heteroepytaxial structures on the basis of photosensitive layers Cd<sub>X</sub>Hg<sub>1-X</sub>Te by electron probe analysis methods

The study of morphology of heteroepytaxial structures on the basis of photosensitive layers Cd<sub>X</sub>Hg<sub>1-X</sub>Te by electron probe analysis methods

Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, orientation, chemical composition of V-defects, caus...

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Bibliographic Details
Main Authors: А. С. Kashuba, A. V. Zablotsky, E. V. Korostylev, A. A. Kuzin, E. V. Permikina, V. V. Arbenina
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2010-10-01
Series:Тонкие химические технологии
Subjects:
solid solution cadmium telluride - mercury telluride c<sub>x</sub>hg<sub>1-x</sub>te
molecular beam epitaxy (мbe)
v-defects
epitaxial layer
heterostructure
scanning electronic microscopy (sem)
electronic probe x-ray microanalysis (epma)
Online Access:https://www.finechem-mirea.ru/jour/article/view/924
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