The study of morphology of heteroepytaxial structures on the basis of photosensitive layers Cd<sub>X</sub>Hg<sub>1-X</sub>Te by electron probe analysis methods
Data of morphology of epitaxial layers CdXHg1-XTe, which has been grown on substrates GaAs (310) by MBE, have been presented. Peculiarities of growing V-defects have been studied by scanning electronic microscopy techniques and EDS. The structure, orientation, chemical composition of V-defects, caus...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2010-10-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/924 |
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