A p-GaN HEMT Voltage Reference With High Line Sensitivity and Power Supply Rejection Ratio
A monolithically integrated voltage reference based on p-GaN HEMT technology is demonstrated in this work. The proposed two-stage structure can improve the stability of the generated reference voltage over a wide range of the supply voltage and temperature. The static and dynamic performance was mea...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11078414/ |
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| Summary: | A monolithically integrated voltage reference based on p-GaN HEMT technology is demonstrated in this work. The proposed two-stage structure can improve the stability of the generated reference voltage over a wide range of the supply voltage and temperature. The static and dynamic performance was measured at various temperatures. Experimental results indicate that the output voltage is stable at 1.3 V when the supply voltage rises from 2.8 V to 40 V, with a line sensitivity of 0.035%/V at room temperature. When the measurement temperature increases to <inline-formula> <tex-math notation="LaTeX">$250~{^{\circ }}$ </tex-math></inline-formula>C, the generated reference voltage slightly decreases to 1.25 V with a temperature coefficient of −22.1 ppm/°C. The power supply rejection ratio of this work is competitive, as the power supply rejection ratio changes from −46.64 dB to −56.2 dB, in which the noise frequency varies from 10 Hz to 5 MHz. The voltage variation of the generated reference voltage is relatively small when the frequency exceeds 5 MHz. The results show that the proposed work is particularly suitable for all-GaN monolithic integration circuits that require thermally stable bias voltages with high immunity to the supply voltage variation. |
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| ISSN: | 2168-6734 |