A p-GaN HEMT Voltage Reference With High Line Sensitivity and Power Supply Rejection Ratio
A monolithically integrated voltage reference based on p-GaN HEMT technology is demonstrated in this work. The proposed two-stage structure can improve the stability of the generated reference voltage over a wide range of the supply voltage and temperature. The static and dynamic performance was mea...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11078414/ |
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