Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
Regularities of the reflected signal intensity changing in time, recorded by the detector of the laser interferometer with the operating frequency of 670 nm during the inductively coupled plasma reactive ion etching in a Cl2/N2/O2 atmosphere of GaN, p-GaN and AlGaN in AlGaN/GaN and p-GaN/AlGaN/GaN h...
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Article |
| Langue: | russe |
| Publié: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2022-12-01
|
| Collection: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Sujets: | |
| Accès en ligne: | https://doklady.bsuir.by/jour/article/view/3495 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|