The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits
The influence of rapid heat treatment (450 °C, 7 s) on the electrical parameters of CMOS integrated circuits during the formation of ohmic contact between aluminum metallization and polysilicon is considered. The following volt-ampere characteristics of the dependence of drain current on voltage were...
Saved in:
Main Authors: | V. A. Pilipenko, N. S. Kovalchuk, Ja. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-10-01
|
Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/3975 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts
by: V. A. Pilipenko, et al.
Published: (2022-12-01) -
Energy-Dispersive X-Ray Microanalysis – as a Method for Study the Aluminium-Polysilicon Interface after Exposure with Long-Term and Rapid Thermal Annealing
by: U. A. Pilipenko, et al.
Published: (2024-07-01) -
Effect of Rapid Thermal Annealing Temperature on the Electrophysical Properties of the Ohmic Contact of Ti/Al/Ni Metallization to the GaN/AlGaN Heterostructure
by: A. D. Yunik, et al.
Published: (2022-06-01) -
Effect of Rapid Thermal Annealing Conditions on the Specific Resistance of the Ohmic Contacts of Ti/Al/Ni/Au Metallization to the GaN/AlGaN Heterostructure
by: A. D. Yunik, et al.
Published: (2023-01-01) -
Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits
by: U. A. Pilipenka, et al.
Published: (2024-06-01)