The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits

The influence of rapid heat treatment (450 °C, 7 s) on the electrical parameters of CMOS integrated circuits during the formation of ohmic contact between aluminum metallization and polysilicon is considered. The following volt-ampere characteristics of the dependence of drain current on voltage were...

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Bibliographic Details
Main Authors: V. A. Pilipenko, N. S. Kovalchuk, Ja. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2024-10-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
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Online Access:https://doklady.bsuir.by/jour/article/view/3975
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