The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits
The influence of rapid heat treatment (450 °C, 7 s) on the electrical parameters of CMOS integrated circuits during the formation of ohmic contact between aluminum metallization and polysilicon is considered. The following volt-ampere characteristics of the dependence of drain current on voltage were...
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Main Authors: | , , , , |
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Format: | Article |
Language: | Russian |
Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-10-01
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Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
Subjects: | |
Online Access: | https://doklady.bsuir.by/jour/article/view/3975 |
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