Study on phase characteristics of heterostructure por-Ga2O3/GaAs

Study on phase characteristics of heterostructure por-Ga2O3/GaAs

The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...

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Bibliographic Details
Main Authors: S. S. Kovachov, I. T. Bohdanov, D. S. Drozhcha, K. M. Tikhovod, V. V. Bondarenko, I. G. Kosogov, Ya. O. Suchikova
Format: Article
Language:English
Published: Chuiko Institute of Surface Chemistry of NAS of Ukraine 2024-05-01
Series:Хімія, фізика та технологія поверхні
Subjects:
Ga2O3
GaAs
electrochemical etching
oxidation
pores
heterostructures
Online Access:https://cpts.com.ua/index.php/cpts/article/view/722
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