Study on phase characteristics of heterostructure por-Ga2O3/GaAs

The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...

Whakaahuatanga katoa

I tiakina i:
Ngā taipitopito rārangi puna kōrero
Ngā kaituhi matua: S. S. Kovachov, I. T. Bohdanov, D. S. Drozhcha, K. M. Tikhovod, V. V. Bondarenko, I. G. Kosogov, Ya. O. Suchikova
Hōputu: Tuhinga
Reo:Ingarihi
I whakaputaina: Chuiko Institute of Surface Chemistry of NAS of Ukraine 2024-05-01
Rangatū:Хімія, фізика та технологія поверхні
Ngā marau:
Urunga tuihono:https://cpts.com.ua/index.php/cpts/article/view/722
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