Study on phase characteristics of heterostructure por-Ga2O3/GaAs
The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , |
|---|---|
| Hōputu: | Tuhinga |
| Reo: | Ingarihi |
| I whakaputaina: |
Chuiko Institute of Surface Chemistry of NAS of Ukraine
2024-05-01
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| Rangatū: | Хімія, фізика та технологія поверхні |
| Ngā marau: | |
| Urunga tuihono: | https://cpts.com.ua/index.php/cpts/article/view/722 |
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