Study on phase characteristics of heterostructure por-Ga2O3/GaAs
The synthesis and characterization of heterostructure por-Ga2O3/GaAs represent a crucial advancement in nanomaterials, particularly in optoelectronic applications. Employing a two-stage electrochemical etching methodology, this research has elucidated the precise conditions required to fabricate su...
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| Päätekijät: | , , , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | englanti |
| Julkaistu: |
Chuiko Institute of Surface Chemistry of NAS of Ukraine
2024-05-01
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| Sarja: | Хімія, фізика та технологія поверхні |
| Aiheet: | |
| Linkit: | https://cpts.com.ua/index.php/cpts/article/view/722 |
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