Performance of InGaN-Based Thin-Film LEDs With Flip-Chip Configuration and Concavely Patterned Surface Fabricated on Electroplating Metallic Substrate
In this paper, a p-pad-up InGaN-based flip-chip (FC) thin-film light-emitting diode (TFLED) on electroplating metallic substrate was fabricated by a combination of electrodes isolation, FC configuration, copper electroplating, and laser lift-off techniques. This allowed formation of n-contacts on Ga...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2016-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7389483/ |
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