Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers
Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equat...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10443439/ |
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