Unexpected large remnant polarization in Sn-doped Bi4Ti3O ferroelectric film by chemical solution deposition
The A-site rare earth-doped Bi4Ti3O[Formula: see text] (BTO) has been highly interested in nonvolatile ferroelectric random memory devices, piezoelectric devices, electro-optical devices, capacitors, sensors, transducers, etc., due to its low coercive field and superior fatigue resistance properties...
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| Päätekijät: | , , , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | englanti |
| Julkaistu: |
World Scientific Publishing
2025-06-01
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| Sarja: | Journal of Advanced Dielectrics |
| Aiheet: | |
| Linkit: | https://www.worldscientific.com/doi/10.1142/S2010135X24500279 |
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