Unexpected large remnant polarization in Sn-doped Bi4Ti3O ferroelectric film by chemical solution deposition

The A-site rare earth-doped Bi4Ti3O[Formula: see text] (BTO) has been highly interested in nonvolatile ferroelectric random memory devices, piezoelectric devices, electro-optical devices, capacitors, sensors, transducers, etc., due to its low coercive field and superior fatigue resistance properties...

Full description

Saved in:
Bibliographic Details
Main Authors: Y. Zhang, D. P. Song, Z. Z. Hui, H. N. Zhu, J. Yang
Format: Article
Language:English
Published: World Scientific Publishing 2025-06-01
Series:Journal of Advanced Dielectrics
Subjects:
Online Access:https://www.worldscientific.com/doi/10.1142/S2010135X24500279
Tags: Add Tag
No Tags, Be the first to tag this record!