Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers

Multi-Bit Resistive Random-Access Memory Based on Two-Dimensional MoO<sub>3</sub> Layers

Two-dimensional (2D) material-based resistive random-access memory (RRAM) has emerged as a promising solution for neuromorphic computing and computing-in-memory architectures. Compared to conventional metal-oxide-based RRAM, the novel 2D material-based RRAM devices demonstrate lower power consumptio...

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Bibliographic Details
Main Authors: Kai Liu, Wengui Jiang, Liang Zhou, Yinkang Zhou, Minghui Hu, Yuchen Geng, Yiyuan Zhang, Yi Qiao, Rongming Wang, Yinghui Sun
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Nanomaterials
Subjects:
<i>α</i>-MoO<sub>3</sub> nanosheet
two-dimensional metal oxides
resistive switching layer
resistive random access memory
multilevel storage
Online Access:https://www.mdpi.com/2079-4991/15/13/1033
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https://www.mdpi.com/2079-4991/15/13/1033

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