Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light
The impact-ionization-enhanced mechanism is introduced into a SiC light-triggered thyristor (LTT) to improve its switching speed under weak UV illumination. The effects of impact ionization on photogenerated carrier multiplication and the dynamic switching performance of the SiC LTT are investigated...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/7/761 |
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