Deposition of SiN<sub>x</sub> Films with Controlled Residual Stress from SiH<sub>4</sub>-NH<sub>3</sub>-He Gaseous Mixture in Inductively Coupled Plasma
We have studied residual mechanical stresses of SiNx films deposited on silicon substrates from a SiH4-NH3-He gaseous mixture in an inductively coupled plasma reactor at a deposition temperature of 150 °C. By varying the flow rate ratio of the reacting gases, the power of the plasma source and the p...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2024-02-01
|
| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/3852 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|