Influence of Laser Irradiation Times on Properties of Porous Silicon
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, su...
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| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad, College of Science for Women
2007-12-01
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| Series: | مجلة بغداد للعلوم |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/848 |
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