PN-Type Near-Infrared High-Speed Graphene Heterojunction Photodetector
In this work, a GaAs-substrate-based PN-type near-infrared high-speed graphene heterojunction photodetector is proposed. The proposed photodetector is only composed of a P-type graphene heterojunction absorption part and a N-type GaAs substrate, where the P-type graphene heterojunction is formed by...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11084908/ |
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