Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity

Vertical cavity surface emitting lasers (VCSEL) are of great interest for photonic and telecom applications, however challenges in fabrication of efficient VSCEL GaN devices are yet to be resolved. In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum we...

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Bibliographic Details
Main Authors: Andrei Sarua, Jon Pugh, Edmund Harbord, Martin Cryan
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10224235/
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