Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity
Vertical cavity surface emitting lasers (VCSEL) are of great interest for photonic and telecom applications, however challenges in fabrication of efficient VSCEL GaN devices are yet to be resolved. In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum we...
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| Huvudupphovsmän: | , , , |
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| Materialtyp: | Artikel |
| Språk: | engelska |
| Publicerad: |
IEEE
2023-01-01
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| Serie: | IEEE Photonics Journal |
| Ämnen: | |
| Länkar: | https://ieeexplore.ieee.org/document/10224235/ |
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