Enhancement of InGaN Quantum Well Photoluminescence in a Tamm Metal/Porous-DBR Micro-Cavity

Vertical cavity surface emitting lasers (VCSEL) are of great interest for photonic and telecom applications, however challenges in fabrication of efficient VSCEL GaN devices are yet to be resolved. In this work we present a study of micro-photoluminescence (PL) emission from a novel InGaN quantum we...

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Bibliografiska uppgifter
Huvudupphovsmän: Andrei Sarua, Jon Pugh, Edmund Harbord, Martin Cryan
Materialtyp: Artikel
Språk:engelska
Publicerad: IEEE 2023-01-01
Serie:IEEE Photonics Journal
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Länkar:https://ieeexplore.ieee.org/document/10224235/
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