Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network
Hardware neural networks based on emerging nonvolatile memory are promising candidates to overcome the Von Neumann computing bottleneck. This study investigates the device characteristics and reliability of ferroelectric field-effect transistors (FeFETs) with a focus on their temperature-dependent p...
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| Main Authors: | , , , , , , , , |
|---|---|
| 格式: | Article |
| 語言: | 英语 |
| 出版: |
IEEE
2025-01-01
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| 叢編: | IEEE Journal of the Electron Devices Society |
| 主題: | |
| 在線閱讀: | https://ieeexplore.ieee.org/document/11067954/ |
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