Yang, G. F., Zhang, Q., Wang, J., Gao, S. M., Zhang, R., & Zheng, Y. D. (2015). Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers. IEEE.
Chicago Style (17th ed.) CitationYang, G. F., Q. Zhang, J. Wang, S. M. Gao, R. Zhang, and Y. D. Zheng. Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers. IEEE, 2015.
MLA (9th ed.) CitationYang, G. F., et al. Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers. IEEE, 2015.
Warning: These citations may not always be 100% accurate.