Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers
The optical and electrical properties of 270/290/330-nm AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) with different Al content in quantum wells and barriers have been investigated systematically. Based on the experimental and numerical study, it is observed that the UV LEDs with lo...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7299249/ |
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