On Ga2O3 Self‐Switching Nano‐Diodes
Abstract In this work, a Ga₂O₃ self‐switching nano‐diode (SSND) fabricated on a sapphire substrate is presented. Unlike previous SSND studies that primarily focused on rectification, this work explores additional device characteristics, including breakdown voltage and photodetection functionality. T...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500177 |
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