APA (7th ed.) Citation

Park, J. Y., Go, S., Lee, D. K., Kim, S., Kim, S., & Kim, S. (2025). Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure. IEEE.

Chicago Style (17th ed.) Citation

Park, Jae Yeon, Seungwon Go, Dong Keun Lee, Seonggeun Kim, Sihyun Kim, and Sangwan Kim. Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure. IEEE, 2025.

MLA (9th ed.) Citation

Park, Jae Yeon, et al. Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure. IEEE, 2025.