Suppression of Reverse Drain-Induced Barrier Lowering in Negative Capacitance FETs Using a Hetero-Metal-Gate Structure
In this paper, the reverse drain-induced barrier lowering (RDIBL) in the negative capacitance field-effect transistor (NCFET) is discussed. It is found that the RDIBL is attributed to the increase of barrier height between channel and drain with the higher drain voltage (<inline-formula> <t...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11023247/ |
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