System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...
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| Hauptverfasser: | , , , , , , , , , |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
IEEE
2025-01-01
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| Schriftenreihe: | IEEE Journal of the Electron Devices Society |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/10767716/ |
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