System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Langue: | anglais |
| Publié: |
IEEE
2025-01-01
|
| Collection: | IEEE Journal of the Electron Devices Society |
| Sujets: | |
| Accès en ligne: | https://ieeexplore.ieee.org/document/10767716/ |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|