APA (7th ed.) Citation

Wang, C., Chang, C., Herklotz, A., Chen, C., Ganss, F., Kentsch, U., . . . Zhou, S. (2020). Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering. Wiley-VCH.

Chicago Style (17th ed.) Citation

Wang, Changan, et al. Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering. Wiley-VCH, 2020.

MLA (9th ed.) Citation

Wang, Changan, et al. Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering. Wiley-VCH, 2020.

Warning: These citations may not always be 100% accurate.