Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering

Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering

Abstract The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultrathin SRO films of several unit cells. In a...

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Bibliographic Details
Main Authors: Changan Wang, Ching‐Hao Chang, Andreas Herklotz, Chao Chen, Fabian Ganss, Ulrich Kentsch, Deyang Chen, Xingsen Gao, Yu‐Jia Zeng, Olav Hellwig, Manfred Helm, Sibylle Gemming, Ying‐Hao Chu, Shengqiang Zhou
Format: Article
Language:English
Published: Wiley-VCH 2020-06-01
Series:Advanced Electronic Materials
Subjects:
defect engineering
Dzyaloshinskii–Moriya interaction
lattice distortion
oxide thin films
topological Hall effect
Online Access:https://doi.org/10.1002/aelm.202000184
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https://doi.org/10.1002/aelm.202000184

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