Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT
A dual Al<sub>2</sub>O<sub>3</sub> MIS gate structure is proposed to enhance the DC and RF performance of enhancement-mode GaN high-electron mobility transistors (HEMTs). As a result, the proposed MOS-HEMT with a dual recessed MIS gate structure offers 84% improvements in cut...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/6/687 |
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