Optimization of In<sub>x</sub>Ga<sub>1−x</sub>N P-I-N Solar Cells: Achieving 21% Efficiency Through SCAPS-1D Modeling

Optimization of In<sub>x</sub>Ga<sub>1−x</sub>N P-I-N Solar Cells: Achieving 21% Efficiency Through SCAPS-1D Modeling

This study provides an in-depth numerical simulation to optimize the structure of InGaN-based p-i-n single homojunction solar cells using SCAPS-1D software. The cell comprised a p-type <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline">&...

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Bibliographic Details
Main Authors: Hassan Abboudi, Walid Belaid, Redouane En-nadir, Ilyass Ez-zejjari, Mohammed Zouini, Ahmed Sali, Haddou El Ghazi
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Crystals
Subjects:
InGaN solar cells
p-i-n structure
SCAPS-1D simulation
bandgap engineering
doping optimization
layer-thickness design
Online Access:https://www.mdpi.com/2073-4352/15/7/633
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