The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure

The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure

The performance of a hole qubit in the Si/Ge/Si heterostructure is considered in this work. For this purpose, a quantum mechanical study using density functional theory and the pseudopotential method has been carried out. The zone structure and density of electronic states were constructed for the e...

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Bibliographic Details
Main Authors: Obrazcov Kirill, Chibisov Andrey, Mamonova Marina
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2025-06-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
silicon
germanium
density functional theory
two-dimensional layer
work function
heterostructure
Online Access:https://physmath.spbstu.ru/article/2025.80.02/
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