High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module
We present a novel instrument for fast-gated operation of a 50 μm CMOS SPAD (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diode), driven by an integrated fast-gated active quenching circuit with transition times faster than 300 ps (20–80%). The ins...
Saved in:
Main Authors: | Marco Renna, Alessandro Ruggeri, Mirko Sanzaro, Federica Villa, Franco Zappa, Alberto Tosi |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
|
Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9169781/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Fast Quantum Gates with Electric Field Pulses and Optical Tweezers in Trapped Ions
by: Clara Robalo Pereira, et al.
Published: (2025-05-01) -
Gated SPAD Arrays for Single-Photon Time-Resolved Imaging and Spectroscopy
by: Enrico Conca, et al.
Published: (2019-01-01) -
Time-Resolved Calibration of Photon Detection Efficiency and Afterpulse Probability in 100 MHz Gated InGaAs/InP Single-Photon Avalanche Diodes
by: Zeyun Wang, et al.
Published: (2025-05-01) -
A Programmable Active Recharge Circuit for SPAD in 110-nm BSI CMOS
by: Hyunho Moon, et al.
Published: (2025-01-01) -
Integrated Optics Modules Based Proposal for Quantum Information Processing, Teleportation, QKD, and Quantum Error Correction Employing Photon Angular Momentum
by: Ivan B. Djordjevic
Published: (2016-01-01)