High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module

We present a novel instrument for fast-gated operation of a 50 μm CMOS SPAD (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diode), driven by an integrated fast-gated active quenching circuit with transition times faster than 300 ps (20–80%). The ins...

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Bibliographic Details
Main Authors: Marco Renna, Alessandro Ruggeri, Mirko Sanzaro, Federica Villa, Franco Zappa, Alberto Tosi
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9169781/
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