Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure

Performance Improvement of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Tapered SiO<sub>2</sub>-Buried Structure

In GaN-based vertical-cavity surface-emitting lasers (VCSELs) with insulator-buried structure, the strong index guiding will introduce higher order modes. In this paper, we present a novel GaN-based VCSEL with a tapered SiO<sub>2</sub>-buried structure by numerical simulations. Compared...

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Bibliographic Details
Main Authors: Rongbin Xu, Yachao Wang, Mingchao Fang, Yang Mei, Leiying Ying, Daquan Yu, Baoping Zhang
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Photonics Journal
Subjects:
GaN-based laser
numerical simulation
vertical-cavity surface-emitting laser (VCSEL)
tapered aperture
modulation response
Online Access:https://ieeexplore.ieee.org/document/10815608/
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https://ieeexplore.ieee.org/document/10815608/

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