CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In<sub>X</sub>Ga<sub>1-X</sub>As ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

CALCULATION OF GROWTH RATES AND COMPOSITIONS OF NANOLAYERS In<sub>X</sub>Ga<sub>1-X</sub>As ON A InP SUBSTRATE USING A 3D MODEL OF A HORIZONTAL MOVPE REACTOR

A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heati...

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Bibliographic Details
Main Authors: A. A. Gorskiy, L. B. Berliner, E. V. Titova
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2013-08-01
Series:Тонкие химические технологии
Subjects:
rotating substrate keeper, horizontal reactor, mocvd, movpe, 3d model, numerical studying, in<sub>x</sub>ga<sub>1-x</sub>as/inp, nanolayers.
Online Access:https://www.finechem-mirea.ru/jour/article/view/576
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Summary:A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section and a rotated substrate keeper with inductive heating used for numerical studying to obtain optimum conditions for the growth process and to calculate the growth rate and the composition of In&lt;sub&gt;x&lt;/sub&gt;Ga&lt;sub&gt;1-x&lt;/sub&gt;As nanolayers.
ISSN:2410-6593
2686-7575

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