Enhancing thermoelectric performance of GeSb4Te7 single crystals through synergistic band and point defect engineering

GeSb4Te7, a quasi-two-dimensional semiconductor, exhibits high potential in thermoelectric applications. Herein, efficacious Yb/In co-doping has been realized in the GeSb4Te7 single crystals prepared by the slow-cooling method to enhance their thermoelectric properties. DFT calculations demonstrate...

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Bibliographic Details
Main Authors: Peng Chen, Chun Yan, Yanci Yan, Hong Wu, Guang Han, Denghang Li, Wei Dong, Bin Zhang, Xu Lu, Dengfeng Li, Yun Zhou, Xiaoyuan Zhou, Guoyu Wang
Format: Article
Language:English
Published: Elsevier 2025-09-01
Series:Journal of Materiomics
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Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000371
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