Photoelastic Refractive Index Changes in GaAs Investigated by Finite Element Method (FEM) Simulations
Changes in the refractive indices of a GaAs laser chip owing to bonding strain are investigated by two-dimensional (2D) and three-dimensional (3D) finite element method (FEM) simulations. The strain induced by die attach (i.e., the bonding strain) was estimated by fitting simulations to the measured...
Tallennettuna:
| Päätekijä: | |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | englanti |
| Julkaistu: |
MDPI AG
2025-05-01
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| Sarja: | Optics |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2673-3269/6/2/21 |
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