Preferential orientation of diamond formation on TaC: Diamond(111)//TaC(111)
Experimental results showed that for the diamond film prepared by hot filament chemical vapor deposition (HFCVD) using Ta filament, TaC existed between diamond and the silicon substrate, and diamond grew directly on TaC, while the inherent mechanism was not clear. Here, a special coherent interface...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2024-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2023.2300764 |
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