Quantitative analysis of impurities in neutron transmutation-doped silicon carbide wafers using neutron activation analysis
Neutron transmutation doping (NTD) modifies the electrical properties of semiconductor materials by irradiating them with neutrons to introduce dopants with high uniformity. Although NTD has been widely utilized for Si semiconductors, its application to SiC, a wide-bandgap material well suited for h...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-11-01
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| Series: | Nuclear Engineering and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1738573325003663 |
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