Memristor Effect in Layered Film Structures

Equivalent  electrical  circuits  of  multilayer  film  structures  with  memristor  switching  of  resistance at   interlayer boundaries and at the boundaries of crystal grains in each layer are proposed. Numerical modeling of   the  current-voltage characteristics of such structures has shown that...

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Bibliographic Details
Main Authors: V. T. Pham, D. A. Podryabinkin, E. B. Chubenko, V. E. Borisenko
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2024-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
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Online Access:https://doklady.bsuir.by/jour/article/view/3925
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